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Journal Articles

Majority- and minority-carrier deep level traps in proton-irradiated $$n^{+}/p$$-InGaP space solar cells

Dharmarasu, N.*; Yamaguchi, Masafumi*; Bourgoin, J. C.*; Takamoto, Tatsuya*; Oshima, Takeshi; Ito, Hisayoshi; Imaizumi, Mitsuru*; Matsuda, Sumio*

Applied Physics Letters, 81(1), p.64 - 66, 2002/07

https://doi.org/10.1063/1.1491005
 Times Cited Count：17 Percentile：55.81(Physics, Applied)

We studied the properties of observed defects in n$$^{+}$$/p-InGaP solar cells created by irradiation of protons with different energies.Three majority (hole) and a minority-carrier traps, labeled respectively as HP1 (E$$_{V}$$+0.90$$pm$$0.05eV), HP2 (E$$_{V}$$+0.73$$pm$$0.05eV), H2 (E$$_{V}$$ +0.55eV),and EP1 (E$$_{C}$$ 0.54eV),were identified using deep level transient spectroscopy. All majority-carrier traps were found to act as recombination centers. While the H2 traps present in the proton-irradiated p-InGaP was found to anneal out by minority-carrier injection, the other traps were not.

Journal Articles

Deep-level transient spectroscopy analysis of proton-irradiated n$$^{+}$$/p InGaP solar cell

Dharmarasu, N.*; Yamaguchi, Masafumi*; Khan, K.*; Takamoto, Tatsuya*; Oshima, Takeshi; Ito, Hisayoshi; Imaizumi, Mitsuru*; Matsuda, Sumio*

Physica B; Condensed Matter, 308-310, p.1181 - 1184, 2001/12

https://doi.org/10.1016/S0921-4526(01)00935-8
 Times Cited Count：7 Percentile：41.34(Physics, Condensed Matter)

Carrier concentration and defects in n+/p InGaP irradiated with 100keV-protons (1E10, 5E12 /cm2) were studied.As a result of C-V measurements, the carrier removal rate was estimated to be 6.1E4 /cm2 which was extremely high as compared to 1MeV-electron irradiation case (0.93 /cm). H1 peak whose energy corresponds to Ev+0.90V was obtained from DLTS measurements. This suggests that carrier removal rate in proton-irradiated ones is much higher than that in electron-irradiated ones due to the generation of the defects (H1 peak) which act as majority carrier traps.

Journal Articles

Impact of lattice defects on the preformance degradation of Si photodiodes by high-temperature $$gamma$$ and electron irradiation

Oyama, Hidenori*; Hirao, Toshio; Simoen, E.*; Claeys, C.*; Onoda, Shinobu*; Takami, Yasukiyo*; Ito, Hisayoshi

Physica B; Condensed Matter, 308-310, p.1226 - 1229, 2001/12

https://doi.org/10.1016/S0921-4526(01)00949-8
 Times Cited Count：31 Percentile：79.64(Physics, Condensed Matter)

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